| 发明名称 | Method for producing group III nitride single crystal | ||
| 摘要 | A method for producing a group III nitride single crystal (ingot) includes providing a seed crystal comprising a first crystal face that is perpendicular to a growth direction of the single crystal and has a first predetermined area, and a second crystal face that is inclined to the growth direction and has a second predetermined area and growing the group III nitride single crystal on the first crystal face and the second crystal face by controlling a growth condition of the single crystal so as not to change the first predetermined area and the second predetermined area. A method for producing a group III nitride single crystal substrate includes further cutting the group III nitride single crystal substrate off from the grown group III nitride single crystal (ingot). | ||
| 申请公布号 | US9234299(B2) | 申请公布日期 | 2016.01.12 |
| 申请号 | US200712003231 | 申请日期 | 2007.12.20 |
| 申请人 | SCIOCS COMPANY LIMITED | 发明人 | Yoshida Takehiro |
| 分类号 | C30B25/02;C30B29/40;C30B25/18 | 主分类号 | C30B25/02 |
| 代理机构 | McGinn IP Law Group, PLLC | 代理人 | McGinn IP Law Group, PLLC |
| 主权项 | 1. A method for producing a group III nitride single crystal, the method comprising: providing a seed crystal comprising a first crystal face that is perpendicular to a growth direction of the single crystal and has a first predetermined area, and a second crystal face that is inclined to the growth direction and has a second predetermined area; and growing the group III nitride single crystal on the first crystal face and the second crystal face by vapor phase growth and by controlling a growth condition of the single crystal so as not to change the first predetermined area and the second predetermined area. | ||
| 地址 | Hitachi-Shi, Ibaraki-Ken JP | ||