| 发明名称 |
NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE |
| 摘要 |
A nitride semiconductor deep ultraviolet light emitting device having a superior light emission efficiency is provided. A nitride semiconductor light emitting device having emission wavelength of 200 to 300 nm includes an n-type layer consisting of a single layer or a plurality of layers having different band gaps, a p-type layer consisting of a single layer or a plurality of layers having different band gaps, an active layer arranged between the n-type layer and the p-type layer, and an electron blocking layer having a band gap larger than any band gap of layers composing the active layer and the p-type layer. The p-type layer includes a first p-type layer having a band gap larger than a band gap of a first n-type layer which has a smallest band gap in the n-type layer. The electron blocking layer is arranged between the active layer and the first p-type layer. |
| 申请公布号 |
US2016005919(A1) |
申请公布日期 |
2016.01.07 |
| 申请号 |
US201414765660 |
申请日期 |
2014.02.02 |
| 申请人 |
TOKUYAMA CORPORATION |
发明人 |
OBATA Toshiyuki |
| 分类号 |
H01L33/06;H01L33/14;H01L33/00;H01L33/32 |
主分类号 |
H01L33/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nitride semiconductor light emitting device having emission wavelength of 200 to 300 nm, comprising:
an n-type layer consisting of a single layer or a plurality of layers having different band gaps; a p-type layer consisting of a single layer or a plurality of layers having different band gaps; an active layer arranged between the n-type layer and the p-type layer; and an electron blocking layer having a band gap larger than any band gap of layers composing the active layer and the p-type layer, wherein the p-type layer comprises a first p-type layer having a band gap larger than a band gap of a first n-type layer which has a smallest band gap in the n-type layer; and the electron blocking layer is arranged between the active layer and the first p-type layer. |
| 地址 |
Yamaguchi JP |
