| 摘要 |
The purpose of the present invention is to provide a pattern measurement method and pattern measurement device for achieving highly accurate measurement in the depth direction of a pattern. The present invention is a pattern measurement method and a device for implementing the pattern measurement, the pattern measurement method having the following steps: a focused ion beam is irradiated so as to form an inclined surface in a sample area including a circuit element having deep holes, deep grooves, or a three-dimensional structure; the field of view of a scanning electron microscope is set so as to include the boundary between the inclined surface and a sample surface; an image of the field of view is obtained on the basis of a detection signal obtained through the scanning of an electron beam over the field of view; the acquired image is used to specify a first position that is the boundary between the inclined surface and a non-inclined surface and a second position that is the position of a desired deep hole or deep groove positioned within the inclined surface; and the height of a pattern composing the circuit element having deep holes, deep grooves, or a three-dimensional structure is determined on the basis of the distance in the sample surface direction between the first position and second position and the angle of the inclined surface. |
