发明名称 METHOD AND SYSTEM FOR PROVIDING A THIN PINNED LAYER IN A PERPENDICULAR MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS
摘要 A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The pinned layer has a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. The nonmagnetic spacer layer and the free layer are between the pinned layer and the substrate. The pinned layer has a pinned layer perpendicular magnetic anisotropy energy greater than a pinned layer out-of-plane demagnetization energy and a thickness of not more than thirty Angstroms.
申请公布号 US2016005791(A1) 申请公布日期 2016.01.07
申请号 US201514731164 申请日期 2015.06.04
申请人 Samsung Electronics Co., Ltd. 发明人 Tang Xueti;Erickson Dustin William;Lee Jangeun
分类号 H01L27/22;H01L43/12;H01L43/02;H01L43/10 主分类号 H01L27/22
代理机构 代理人
主权项 1. A magnetic junction residing on a substrate and usable in a magnetic device comprising: a free layer, the free layer being switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; a nonmagnetic spacer layer; and a pinned layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer, the nonmagnetic spacer layer and the free layer being between the pinned layer and the substrate, the pinned layer having a pinned layer perpendicular magnetic anisotropy energy greater than a pinned layer out-of-plane demagnetization energy, the pinned layer having a thickness of not more than thirty Angstroms.
地址 Gyeonggi-do KR