发明名称 E-FUSE TEST DEVICE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
摘要 An e-fuse test device is provided. The e-fuse test device may include a first transistor, and a fuse array connected to a source/drain terminal of the first transistor. The fuse array may include n fuse groups, each of the fuse groups may include one end, the other end, and m first fuse elements connected in series to each other between the one end and the other end, the one end of each of the fuse groups may be connected to each other, and the other end of each of the fuse groups may be connected to the source/drain terminal of the first transistor, and the n and m are natural numbers that are equal to or larger than two.
申请公布号 US2016005494(A1) 申请公布日期 2016.01.07
申请号 US201514713458 申请日期 2015.05.15
申请人 Samsung Electronics Co., Ltd. 发明人 CHOI Hyun-Min;PARK In-Gyu;SONG Jung-Hak
分类号 G11C29/50;G11C17/18;G11C17/16 主分类号 G11C29/50
代理机构 代理人
主权项 1. An e-fuse test device comprising: a first transistor including a first gate terminal configured to receive a first gate voltage, a first source/drain terminal, and a second source/drain terminal, wherein the e-fuse test device is configured to detect a current passing through the first transistor; and a fuse array including n sets of fuses, each set arranged between a first end line and a second end line, wherein each respective set of fuses of the n sets of fuses includes a first end, a second end, and m first fuse elements connected in series to each other between the first end and the second end, wherein the first ends of the respective sets of fuses of the n sets of fuses are connected to the first end line, and the second ends of the respective sets of fuses of the n sets of fuses are connected to the second end line and the first source/drain terminal of the first transistor, wherein the first end line is configured to receive a first source voltage, and wherein the n and m are natural numbers that are equal to or larger than 2.
地址 Suwon-si KR