| 发明名称 |
NON-VOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME |
| 摘要 |
A non-volatile memory device includes a memory cell array having a plurality of memory cells programmable into one of multiple logic states, the plurality of memory cells disposed at intersections of a plurality of wordlines and a plurality of bitlines, and a plurality of page buffers respectively connected to the plurality of bitlines and performing verifying read operations on the plurality of memory cells, The verifying read operations are performed on a first memory cell having a target state and a second memory cell having a lower state than the target state. |
| 申请公布号 |
US2016005490(A1) |
申请公布日期 |
2016.01.07 |
| 申请号 |
US201514639341 |
申请日期 |
2015.03.05 |
| 申请人 |
SHIM DONG-KYO |
发明人 |
SHIM DONG-KYO |
| 分类号 |
G11C16/34;G11C16/24;G11C16/26;G11C16/10 |
主分类号 |
G11C16/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A non-volatile memory device comprising:
a memory cell array having a plurality of memory cells programmable into one of multiple logic states, the plurality of memory cells disposed at intersections of a plurality of wordlines and a plurality of bitlines; and a plurality of page buffers respectively connected to the plurality of bitlines and performing verifying read operations on the plurality of memory cells, wherein the verifying read operations are performed on a first memory cell having a target state and a second memory cell having a lower state than the target state. |
| 地址 |
SEOUL KR |
