| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device includes a first semiconductor layer, a second semiconductor layer formed over the first semiconductor layer, a gate insulating film contacting the second semiconductor layer, and a gate electrode facing the second semiconductor layer via the gate insulating film. The first semiconductor layer includes an Alxα1-xN layer (α includes Ga or In, and 0<x<1), and the second semiconductor layer includes an Alyα1-yN layer (0≦y<1), in which y of the Alyα1-yN layer forming the second semiconductor layer increases at least in a region under the gate electrode as a position where y is measured approaches the first semiconductor layer. |
| 申请公布号 |
US2016005846(A1) |
申请公布日期 |
2016.01.07 |
| 申请号 |
US201514829216 |
申请日期 |
2015.08.18 |
| 申请人 |
Renesas Electronics Corporation |
发明人 |
OKAMOTO Yasuhiro;NAKAYAMA Tatsuo;INOUE Takashi;MIYAMOTO Hironobu |
| 分类号 |
H01L29/778;H01L29/205;H01L29/423;H01L29/20 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A semiconductor device, comprising:
a first semiconductor layer; a second semiconductor layer formed over the first semiconductor layer; a gate insulating film contacting the second semiconductor layer; and a gate electrode facing the second semiconductor layer via the gate insulating film, wherein the first semiconductor layer comprises an Alxα1-xN layer (a comprises Ga or In, and 0<x<1), and the second semiconductor layer comprises an Alyα1-yN layer (0≦y<1), and wherein y of the Alyα1-yN layer forming the second semiconductor layer increases at least in a region under the gate electrode as a position where y is measured approaches the first semiconductor layer. |
| 地址 |
Tokyo JP |
