发明名称 |
INTRODUCTION AND DIFFUSION OF PLATINUM ION INSIDE SILICON SLICE |
摘要 |
PURPOSE: To make it possible to constantly keep intrinsic resistance distribution in thickness direction and along the surface of a semiconductor slice by a method wherein the transimplantation of platinum ions is conducted before formation of a contact point and conduction of a metallization process on the backside of a silicon slice against the semiconductor device after a heat process at high temperature. CONSTITUTION: Chemical etching is conducted on the rear surface of a substrate 1, where a total heat treatment process is conducted for the purpose of removing the oxide layer generated as a matter of cource on the rear surface of the substrate 1 where a total heat treatment process is conducted at a high temperature. Subsequently, platinum ions are transplanted. Then, an aperture at contact point reaching the lower layer of source region 4 is formed by etching a passivation oxide 7 for the purpose of providing a window 12. A part of the oxide 7 is left in the amount with which a gate electrode 5 can be insulated from a source metallized layer 9 which is vapor deposited on the whole surface of the device. Thereafter, a metallized layer 11 is vapor deposited on the rear of the substrate 1 for drain metallization. Accordingly, a flat and controlled intrinsic resistance distribution can be formed in thickness direction of a silicon slice.
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申请公布号 |
JPH07111329(A) |
申请公布日期 |
1995.04.25 |
申请号 |
JP19910307367 |
申请日期 |
1991.11.22 |
申请人 |
CONSORZIO PERU LA RICHIERUKA SUTSURA MICROELETTRONICA NERU MEZOJIORUNO |
发明人 |
FUERUTSUCHIO FURIISHINA;NERA TABUOORO;MARIO RASUPARIISHI |
分类号 |
H01L21/322;H01L21/22;H01L21/265;H01L21/336;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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地址 |
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