GATE DRIVING CIRCUIT FOR INSULATED GATE-TYPE POWER SEMICONDUCTOR ELEMENT

摘要

The purpose of the present invention is to prevent the worsening of stationary loss in an insulated gate-type power semiconductor element. A gate driving circuit (2) comprises: an NchMOSFET (4) that turns an insulated gate-type power semiconductor element (1) ON; a PchMOSFET (5) that turns the insulated gate-type power semiconductor element (1) OFF; a control circuit (6) that turns the NchMOSFET (4) ON by imparting a positive voltage (8b) to the gate electrode of the NchMOSFET (4), and that turns the PchMOSFET (5) ON by imparting a negative voltage (9) to the gate electrode of the PchMOSFET (5); and a power supply body (7) that imparts the negative voltage (9) to the drain electrode of the PchMOSFET (5) and the negative-side electrode of the control circuit (6), imparts a positive voltage (8a) to the drain electrode of the NchMOSFET (4), and imparts the positive voltage (8b) to the positive-side electrode of the control circuit (6), such positive voltage having a greater absolute value than the absolute value of the positive voltage (8a) which is imparted to the drain electrode of the NchMOSFET (4).