发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 An element electrode is located on a surface of a semiconductor element. A metal film is located on the element electrode and includes an inner region and an outer region located around the inner region. The metal film has an opening that exposes the element electrode between the inner region and the outer region. The element electrode has solder wettability lower than solder wettability of the metal film. An external electrode is solder-bonded to the inner region of the metal film.
申请公布号 US2016005703(A1) 申请公布日期 2016.01.07
申请号 US201314769387 申请日期 2013.10.04
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 NAKATA Yosuke;NAKANO Seiya
分类号 H01L23/00;H01L21/78 主分类号 H01L23/00
代理机构 代理人
主权项 1. A semiconductor device, comprising: a semiconductor element; an element electrode located on a surface of said semiconductor element; a metal film that is located on said element electrode and includes an inner region and an outer region located around said inner region, said metal film having an opening that exposes said element electrode between said inner region and said outer region, said element electrode having solder wettability lower than solder wettability of said metal film; and an external electrode solder-bonded to said inner region of said metal film.
地址 Tokyo JP