发明名称 |
MANUFACTURING METHOD OF GRAPHENE MODULATED HIGH-K OXIDE AND METAL GATE MOS DEVICE |
摘要 |
A manufacturing method of a graphene modulated high-k oxide and metal gate Ge-based MOS device, which comprises the following steps: 1) introducing a graphene thin film on a Ge-based substrate; 2) conducting fluorination treatment to the graphene thin film to form fluorinated graphene; 3) activating the surface of the fluorinated graphene by adopting ozone plasmas, and then forming a high-k gate dielectric on the surface of the fluorinated graphene through an atomic layer deposition technology; and 4) forming a metal electrode on the surface of the high-k gate dielectric. Since the present invention utilizes the graphene as a passivation layer to inhibit the formation of unstable oxide GeOx on the surface of the Ge-based substrate and to stop mutual diffusion between the gate dielectric and the Ge-based substrate, the interface property between Ge and the high-k gate dielectric layer is improved. The fluorinated graphene can enable the graphene to become a high-quality insulator on the basis of keeping the excellent property of the graphene, so that the influence thereof on the electrical property of the Ge-based device is reduced. By adopting the ozone plasmas to treat the Ge-based graphene and then by adopting the atomic layer deposition technology, an ultrathin Hf-based high-k gate dielectric layer can be obtained. |
申请公布号 |
US2016005609(A1) |
申请公布日期 |
2016.01.07 |
申请号 |
US201414423234 |
申请日期 |
2014.02.21 |
申请人 |
SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |
发明人 |
DI ZENGFENG;ZHENG XIAOHU;WANG GANG;ZHANG MIAO;WANG XI |
分类号 |
H01L21/28;H01L29/51;H01L21/02;H01L21/324;H01L21/285;H01L29/66;H01L21/66;H01L29/16;H01L21/265 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
1. A manufacturing method of a graphene modulated high-k oxide and metal gate Ge-based MOS device, characterized in that the manufacturing method at least comprises the following steps:
1) introducing a graphene thin film on a Ge-based substrate; 2) conducting fluorination treatment to the graphene thin film to form a fluorinated graphene insulating thin layer; 3) activating the surface of the fluorinated graphene by adopting ozone plasmas, and then forming a high-k gate dielectric on the surface of the fluorinated graphene through an atomic layer deposition technology; 4) forming a metal electrode on the surface of the high-k gate dielectric. |
地址 |
SHANGHAI CN |