| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate ablation method which can prevent energy diffusion and laser beam reflection. <P>SOLUTION: The semiconductor substrate ablation method ablates a semiconductor substrate by emitting laser beams thereto and comprises a protective film forming process which applies a liquid resin mixed with fine powder of nitride having absorbability with respect to laser beam wavelength to at least a semiconductor substrate area to be ablated so as to form a protective film containing the fine powder and a laser processing process which emits laser beams to the semiconductor substrate area with the protective film formed therein for ablation after the protective film forming process. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
