发明名称 Memory system and method of operation thereof
摘要 A method of operating a memory system including a non-volatile memory device and a memory controller controlling the non-volatile memory device, includes reading data from a memory cell array in a unit of a page which includes a plurality of sectors; performing error correction decoding on the read data in a unit of a sector of the page; selecting at least one target sector which includes at least one uncorrectable error and selecting at least one pass sector wherein all errors of the pass sector are correctable by the error correction decoding; inhibiting precharging of bit-lines connected to the at least one pass sector while precharging target bit lines connected to the at least one target sector; and performing a read retry operation for data in the at least one target sector.
申请公布号 US9230669(B2) 申请公布日期 2016.01.05
申请号 US201414154641 申请日期 2014.01.14
申请人 Samsung Electronics Co., Ltd. 发明人 Jung Bong-Kil;Kim Hyung-Gon;Byeon Dae-Seok
分类号 G11C11/34;G11C16/04;G11C16/26;G11C16/24;G11C29/04;G06F11/10 主分类号 G11C11/34
代理机构 Volentine & Whitt, PLLC 代理人 Volentine & Whitt, PLLC
主权项 1. A method of operating a memory system including a non-volatile memory device and a memory controller controlling the non-volatile memory device, the method comprising: reading data from a memory cell array in a unit of a page which includes a plurality of sectors; performing error correction decoding on the read data in a unit of a sector of the page; selecting at least one target sector which includes at least one uncorrectable error in the read data thereof, and selecting at least one pass sector wherein all errors of the read data of the pass sector are correctable by the error correction decoding; inhibiting precharging of bit-lines connected to the at least one pass sector while precharging target bit lines connected to the at least one target sector; and performing a read retry operation for data stored in the at least one target sector.
地址 Suwon-si, Gyeonggi-do KR