Method for wear leveling in a nonvolatile memory

摘要

A method for writing and reading data memory cells, comprising: defining in a first memory zone erasable data pages and programmable data blocks; and, in response to write commands of data, writing data in erased blocks of the first memory zone, and writing, in a second memory zone, metadata structures associated with data pages and comprising, for each data page, a wear counter containing a value representative of the number of times that the page has been erased.

主权项

1. A system, comprising:
a program memory; a processor communicatively coupled to the program memory; and at least one nonvolatile memory, communicatively coupled to the processor, comprising electrically erasable and programmable memory cells, wherein the program memory stores instructions which, when executed by the processor, cause the processor to:
define data pages in a first nonvolatile memory zone;define in the data pages programmable data blocks;define in a second nonvolatile memory zone, metadata pages comprising metadata structures associated with the data pages present in the first nonvolatile memory zone wherein each of the data pages is associated with a metadata structure of the metadata pages and each metadata structure includes a wear counter containing a value representative of a number of times that the data page associated with the metadata structure has been erased;attribute to each metadata page a wear counter containing a value representative of a number of times that a metadata page to which the wear counter is attributed has been erased; andarrange wear counters attributed to metadata pages inside respective metadata pages.