| 发明名称 | Back side illumination photodiode of high quantum efficiency | ||
| 摘要 | A back side illumination photodiode includes a light-receiving back side surface of a semiconductor material substrate. An area of the light-receiving back side surface includes a recess. The recess is filled with a material having an optical index that is lower than an optical index of the semiconductor material substrate. Both the substrate and the filling material are transparent to an operating wavelength of the photodiode. The recess may be formed to have a ring shape. | ||
| 申请公布号 | US9231014(B2) | 申请公布日期 | 2016.01.05 |
| 申请号 | US201414464793 | 申请日期 | 2014.08.21 |
| 申请人 | STMicroelectronics SA;Commissariat A L'Energie Atomique et aux Energies Alternatives | 发明人 | Frey Laurent;Marty Michel |
| 分类号 | H01L29/06;H01L27/14;H01L31/062;H01L21/00;H01L27/146;H01L31/0232;H01L31/107;H01L31/0352 | 主分类号 | H01L29/06 |
| 代理机构 | Gardere Wynne Sewell LLP | 代理人 | Gardere Wynne Sewell LLP |
| 主权项 | 1. A back side illumination (BSI) photodiode including a semiconductor layer having a light receiving back surface, wherein at least one area of the light-receiving back surface comprises a recess provided in the semiconductor layer, said recess filled with a material having an optical index lower than an optical index of a semiconductor material for the semiconductor layer of the photodiode, said material having the lower optical index being transparent to an operating wavelength of the BSI photodiode. | ||
| 地址 | Montrouge FR | ||