Error handling method, memory storage device and memory controlling circuit unit

摘要

An error handling method, a memory storage device and a memory controlling circuit unit are provided. The method includes obtaining a finished event corresponding to a channel; determining whether the finished event is a failed event, if the finished event is the failed event; stopping an operation of the channel and performing a first update operation on a counting value corresponding to the channel; and if the finished event is not the failed event, keeping the counting value corresponding to the channel unchanged and processing the finished event. The step of the processing the finished event includes performing a second update operation on the counting value corresponding to the channel if the finished event is the failed event, and recovering the operation of the channel if the counting value matches a threshold criterion. Accordingly, it can improve the accessing performance.

主权项

1. An error handling method for a memory controlling circuit unit, wherein a plurality of channels are coupled between the memory controlling circuit unit and a rewritable nonvolatile memory module, the error handling method comprising:
obtaining a finished event corresponding to a first channel among the channels; determining whether the finished event is a failed event; if the finished event is the failed event, stopping an operation of the first channel and performing a first update operation on a counting value corresponding to the first channel; if the finished event is not the failed event, keeping the counting value corresponding to the first channel unchanged; and processing the finished event, wherein the step of processing the finished event comprises:
if the finished event is the failed event, performing a second update operation on the counting value corresponding to the first channel and performing an error handling procedure; andif the counting value matches a threshold criterion, recovering the operation of the first channel.