| 发明名称 |
CHEMICAL MECHANICAL POLISHING LAYER FORMULATION WITH CONDITIONING TOLERANCE |
| 摘要 |
A chemical mechanical polishing pad is provided containing: a polyurethane polishing layer having a composition and a polishing surface; wherein the polyurethane polishing layer composition exhibits an acid number equal to or greater than 0.5 mg (KOH)/g; wherein the polishing surface is adapted for polishing a substrate; and, wherein the polishing surface exhibits a conditioning tolerance equal to or greater than 80%. |
| 申请公布号 |
KR20160000856(A) |
申请公布日期 |
2016.01.05 |
| 申请号 |
KR20150088248 |
申请日期 |
2015.06.22 |
| 申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC.;DOW GLOBAL TECHNOLOGIES LLC |
发明人 |
QIAN BAINIAN;DEGROOT MARTY;SONNENSCHEIN MARK F. |
| 分类号 |
B24B37/24;B24D3/32;B24D3/34;C08G18/12;H01L21/304 |
主分类号 |
B24B37/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
