| 摘要 |
The present invention relates to a chamber well for an ion injector and an ion generation apparatus including the same. According to the present invention, a coating structure including a semi-carbide layer for the purposes of stabilization against thermal deformation, protection from abrasion, or resistance to separation of a deposited product is provided to components such as a repeller, a cathode, a chamber well, and a slit member constituting an arc chamber of an ion generation apparatus for ion injection used to manufacture a semiconductor device. The chamber well enables a precise ion injection process to be performed without distortion of an ion generation location or twist of equipment and can uniformly reflect electrons to the inside of the arc chamber. Therefore, a component for an ion injector, which not only increases efficiency for decomposing ion source gas by increasing uniformity of plasma but also has significantly increased durability compared to an existing component, and the ion generation apparatus including the component for an ion injector can be provided. |
