Light emitting diode

摘要

A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, an upper electrode, and a lower electrode. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer. The lower electrode is electrically connected with the first semiconductor layer, and the upper electrode is electrically connected with the second semiconductor layer. A surface of the second semiconductor layer away from the active layer is used as the light extraction surface. A surface of the first semiconductor layer connected with the lower electrode is a patterned surface including a number of grooves.

主权项

1. A light emitting diode, comprising:
a first semiconductor layer having a patterned surface defining a plurality of grooves, wherein a width of each of the plurality of grooves ranges from about 50 nanometers to about 100 nanometers; a second semiconductor layer having a light extraction surface; an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, wherein the light extraction surface of the second semiconductor layer and the patterned surface of the first semiconductor layer are away from the active layer; an upper electrode electrically connected with the second semiconductor layer; and a lower electrode electrically connected with the patterned surface, wherein the lower electrode covers the entire patterned surface of the first semiconductor layer.