| 摘要 |
The present invention relates to a plasma processing device with improved reproducibility, or a plasma processing method. The plasma processing device includes: a processing chamber placed in a vacuum container, and forming plasma by reducing pressure of the inside thereof; a processing table placed in the processing chamber, and on which a wafer of an object to be processed is placed; a first power supply outputting an electric field supplied from the top of the vacuum container into the processing chamber to form the plasma, and forming an electric field of a first frequency supplied by repeating high output and low output while the wafer is being processed; a second power supply supplying the power of a second frequency to an electrode placed inside the processing table; and a control device matching the impedance of the first power supply with a value between low-output load impedance and high-output load impedance of the electric field while the wafer is being processed. |
