| 发明名称 |
ZINC OXIDE SPUTTERING TARGET |
| 摘要 |
Provided is a zinc oxide-based sputtering target capable of improving the film formation rate while suppressing arcing in the formation of a zinc oxide-based transparent conductive film by sputtering. This zinc oxide-based sputtering target includes a zinc oxide-based sintered body mainly including zinc oxide crystal grains, and has a degree of (002) orientation of 50% or greater at a sputtering surface and a density of 5.30 g/cm3 or greater. |
| 申请公布号 |
US2015376024(A1) |
申请公布日期 |
2015.12.31 |
| 申请号 |
US201514848842 |
申请日期 |
2015.09.09 |
| 申请人 |
NGK Insulators, Ltd. |
发明人 |
YOSHIKAWA Jun;IMAI Katsuhiro;KONDO Koichi;KANNO Koki |
| 分类号 |
C01G9/02;C23C14/34 |
主分类号 |
C01G9/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A zinc oxide-based sputtering target, comprising a zinc oxide-based sintered body mainly comprising zinc oxide crystal grains, wherein the zinc oxide-based sputtering target has a degree of (002) orientation of 50% or greater at a sputtering surface and has a density of 5.40 g/cm3 or greater. |
| 地址 |
Nagoya-Shi JP |
