主权项 |
1. A semiconductor structure, comprising:
a substrate; a first un-doped semiconductor layer, disposed on the substrate; a second un-doped semiconductor layer, disposed on the first un-doped semiconductor layer; and at least one doped insertion layer, disposed between the first un-doped semiconductor layer and the second un-doped semiconductor layer, wherein a chemical formula of the doped insertion layer is InxAlyGa1-x-yN, wherein 0≦x≦1, 0≦y≦1. |