发明名称 SEMICONDUCTOR STRUCTURE
摘要 A semiconductor structure includes a substrate, a first un-doped semiconductor layer, a second un-doped semiconductor layer and at least one doped insertion layer. The first un-doped semiconductor layer is disposed on the substrate. The second un-doped semiconductor layer is disposed on the first un-doped semiconductor layer.;The doped insertion layer is disposed between the first un-doped semiconductor layer and the second un-doped semiconductor layer. A chemical formula of the doped insertion layer is InxAlyGa1-x-yN, wherein 0≦x≦1, 0≦y≦1.
申请公布号 US2015380605(A1) 申请公布日期 2015.12.31
申请号 US201514707010 申请日期 2015.05.08
申请人 Genesis Photonics Inc. 发明人 Cheng Chi-Hao;Huang Chi-Feng;Tu Sheng-Han
分类号 H01L33/12;H01L33/32 主分类号 H01L33/12
代理机构 代理人
主权项 1. A semiconductor structure, comprising: a substrate; a first un-doped semiconductor layer, disposed on the substrate; a second un-doped semiconductor layer, disposed on the first un-doped semiconductor layer; and at least one doped insertion layer, disposed between the first un-doped semiconductor layer and the second un-doped semiconductor layer, wherein a chemical formula of the doped insertion layer is InxAlyGa1-x-yN, wherein 0≦x≦1, 0≦y≦1.
地址 Tainan City TW