THIN-FILM AMBIPOLAR LOGIC

摘要

An ambipolar electronic device is disclosed. The device may include a field-effect transistor (FET), which may have a handle substrate layer, two contacts and an inorganic crystalline layer between the handle substrate layer and the contacts. The inorganic crystalline layer may have a doped channel region between the contacts. The FET may also have a dielectric layer between the contacts, attached to the inorganic crystalline layer, and a gate layer, attached to the dielectric layer. The FET may conduct current, in response to a first gate voltage applied to the gate layer, using electrons as a majority carrier, along the length of the channel region between the contacts. The FET may also conduct current, in response to a second gate voltage applied to the gate layer, using holes as a majority carrier, along the length of the channel region between the contacts.

主权项

1. A method for manufacturing an ambipolar FET (field-effect transistor) device, the method comprising:
forming a buried insulator layer on a handle substrate layer; forming an inorganic crystalline layer on the buried insulator layer; depositing a metallic layer on a bottom surface of the handle substrate layer; forming a first electrically conductive contact and a second electrically conductive contact on a top surface of the inorganic crystalline layer; depositing a dielectric layer on a top surface of the inorganic crystalline layer; and depositing an electrically conductive material between the first electrically conductive contact and the second electrically conductive contact, to form a metal layer that is configured to function as a gate of the ambipolar FET by:
causing, in response to a first gate voltage and using electrons as a majority carrier, current to be conducted, along a length of a channel region between a first contact and a second contact;causing, in response to a second gate voltage and using holes as a majority carrier, current to be conducted, along the length of the channel region between the first contact and the second contact.