发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
The reliability of a semiconductor device is improved. A probe mark is formed on a probe region of a pad covered with a protective insulating film. And, a pillar-shaped electrode has a first portion formed on an opening region and a second portion that is extended over the probe region from the upper portion of the opening region. At this time, a center position of the opening region is shifted from a center position of the pillar-shaped electrode that is opposed to a bonding finger. |
申请公布号 |
US2015380345(A1) |
申请公布日期 |
2015.12.31 |
申请号 |
US201514750009 |
申请日期 |
2015.06.25 |
申请人 |
Renesas Electronics Corporation |
发明人 |
ONO Yoshihiro;KINOSHITA Nobuhiro;KIDA Tsuyoshi;KONNO Jumpei;SAKATA Kenji;MORI Kentaro;BABA Shinji |
分类号 |
H01L23/495;H01L23/544 |
主分类号 |
H01L23/495 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
(a) a wiring substrate including a first surface and a bonding finger formed on the first surface; and (b) a semiconductor chip including a main surface, a pad formed on the main surface, a protective insulating film formed on the pad, and a pillar-shaped electrode formed on an opening region of the pad exposed from the protective insulating film, the semiconductor chip being electrically connected to the bonding finger of the wiring substrate via the pillar-shaped electrode so that the main surface is opposed to the first surface of the wiring substrate, wherein a probe mark is formed on a probe region of the pad covered with the protective insulating film, the pillar-shaped electrode includes: a first portion formed on the opening region; and a second portion formed on the protective insulating film covering the probe region, and a center position of the opening region is shifted from a center position of the pillar-shaped electrode opposed to the bonding finger. |
地址 |
Kanagawa JP |