发明名称 |
SEMICONDUCTOR DEVICE HAVING INTERCONNECTION LINE |
摘要 |
Provided is a semiconductor device. The semiconductor device includes an insulating layer extending in a first direction. A first vertical channel pillar is disposed separately from the insulating layer. A first interconnection line extends in a second direction perpendicular to the first direction, and is electrically connected to the first vertical channel pillar. A first bit line extends in the second direction, and crosses over the first interconnection line and the first vertical channel pillar. A first bit contact overlaps the first interconnection line, and electrically connects the first interconnection line to the first bit line. A length of the first bit contact in the second direction is greater than a length of the first bit contact in the first direction. |
申请公布号 |
US2015380549(A1) |
申请公布日期 |
2015.12.31 |
申请号 |
US201414576257 |
申请日期 |
2014.12.19 |
申请人 |
YUN JANG-GN;CHO HOO-SUNG;YUN JAE-SUN |
发明人 |
YUN JANG-GN;CHO HOO-SUNG;YUN JAE-SUN |
分类号 |
H01L29/78;H01L29/36;H01L27/088;H01L23/528 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
an insulating layer extending in a first direction; a first vertical channel pillar disposed separately from the insulating layer; a first interconnection line extending in a second direction perpendicular to the first direction, wherein the first interconnection line is electrically connected to the first vertical channel pillar; a first bit line extending in the second direction, wherein the first bit line crosses over the first interconnection line and the first vertical channel pillar; and a first bit contact overlapping the first interconnection line, wherein the first bit contact electrically connects the first interconnection line to the first bit line, and wherein a length of the first bit contact in the second direction is greater than a length of the first bit contact in the first direction. |
地址 |
Gyeonggi-do KR |