DOPED PROTECTION LAYER FOR CONTACT FORMATION

摘要

A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate with a gate stack formed on the semiconductor substrate. The method also includes forming a protection layer doped with a quadrivalent element to cover a first doped region formed in the semiconductor substrate and adjacent to the gate stack. The method further includes forming a main spacer layer on a sidewall of the gate stack to cover the protection layer and forming an insulating layer over the protection layer. In addition, the method includes forming an opening in the insulating layer to expose a second doped region formed in the semiconductor substrate and forming one contact in the opening.

主权项

1. A method for forming a semiconductor device, comprising:
providing a semiconductor substrate with a gate stack formed thereon; forming a protection layer doped with a quadrivalent element to cover a first doped region formed in the semiconductor substrate and adjacent to the gate stack; forming a main spacer layer on a sidewall of the gate stack to cover the protection layer; forming an insulating layer over the protection layer; forming an opening in the insulating layer to expose a second doped region formed in the semiconductor substrate; and forming one contact in the opening.