NITRIDE SEMICONDUCTOR LAYER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER

摘要

According to one embodiment, a nitride semiconductor layer spreading along a first surface is provided. The nitride semiconductor layer includes a first region and a second region. A length of the first region in a first direction parallel to the first surface is longer than a length of the first region in a second direction parallel to the first surface and perpendicular to the first direction. The second region is arranged with the first region in the second direction. A length of the second region in the first direction is longer than a length of the second region in the second direction. A c-axis being is tilted with respect to the second direction for the first region and the second region. The c-axis intersects a third direction perpendicular to the first surface.

主权项

1. A nitride semiconductor layer spreading along a first surface, the nitride semiconductor layer comprising:
a first region, a length of the first region in a first direction parallel to the first surface being longer than a length of the first region in a second direction parallel to the first surface and perpendicular to the first direction; and a second region arranged with the first region in the second direction, a length of the second region in the first direction being longer than a length of the second region in the second direction, a c-axis being tilted with respect to the second direction for the first region and the second region, the c-axis intersecting a third direction perpendicular to the first surface.