| 摘要 |
According to an embodiment of the present invention, a semiconductor device includes a diamond-containing n-type semiconductor layer, a first section-containing first electrode, an intermediate layer, and a diamond-containing p-type semiconductor layer. The intermediate layer contains at least one of a carbide, graphite, graphene, and amorphous carbon. The carbide contains at least one of Ti, Si, Al, W, Ni, Cr, Ca, Li, Ru, Mo, Zr, Sr, Co, Rb, K, Cu and Na. The intermediate layer includes a first region, which is provided between the first section and the n-type semiconductor layer, and a second region, which is provided at the periphery of the first region when projected onto a flat surface that is perpendicular to the direction from the n-type semiconductor layer towards the first electrode and which is connected to the first region without overlapping the first section. |
