发明名称 COMPLEMENTARY BACK END OF LINE (BEOL) CAPACITOR
摘要 A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes at least one lower interconnect layer of the interconnect stack. The CBC structure may also include a second upper interconnect layer of the interconnect stack coupled to the MOM capacitor structure. The CBC structure also includes at least one metal insulator metal (MIM) capacitor layer between the first upper interconnect layer and the second upper interconnect layer. In addition, CBC structure may also include a MIM capacitor structure coupled to the MOM capacitor structure. The MIM capacitor structure includes a first capacitor plate having at least a portion of the first upper interconnect layer, and a second capacitor plate having at least a portion of the MIM capacitor layer(s).
申请公布号 EP2959507(A1) 申请公布日期 2015.12.30
申请号 EP20140707282 申请日期 2014.02.11
申请人 QUALCOMM INCORPORATED 发明人 ZHU, JOHN J.;YANG, BIN;CHIDAMBARAM, PR;GE, LIXIN;CHOI, JIHONG
分类号 H01L23/522 主分类号 H01L23/522
代理机构 代理人
主权项
地址