High voltage semiconductor device and method for fabricating the same

摘要

A high voltage semiconductor device is provided. The device includes a semiconductor substrate having a high voltage well with a first conductivity type therein. A gate structure is disposed on the semiconductor substrate of the high voltage well. A source doped region and a drain doped region are in the high voltage well on both sides of the gate structure, respectively. A lightly doped region with the first conductivity type is between the source and drain doped regions and relatively near to the source doped region. The disclosure also presents a method for fabricating a high voltage semiconductor device.

主权项

1. A high voltage semiconductor device, comprising:
an epitaxial layer with a first conductivity type formed on a semiconductor substrate, having a first high voltage well with a second conductivity type opposite to the first conductivity type therein; a gate structure comprising a gate electrode and gate spacers on opposite sidewalls of the gate electrode disposed on the epitaxial layer of the first high voltage well; a body doped region with the first conductivity type in the first high voltage well on a first side of the gate structure; a source doped region in the body doped region; a drain doped region in the first high voltage well on a second side opposite to the first side of the gate structure, the drain doped region comprises a double diffused region; and a first lightly doped region with the first conductivity type in the body doped region and near to the source doped region, and wherein one of the gate spacers is in direct contact with the first lightly doped region and the other of the gate spacers is in direct contact with the double diffused region.