发明名称 |
Composite substrate for layered heaters |
摘要 |
A method of forming a heater assembly for use in semiconductor processing includes thermally securing a heater substrate to an application substrate; and applying a layered heater to the heater substrate after the heater substrate is secured to the application substrate. The application of the layered heater includes applying a first dielectric layer onto the heater substrate, applying a resistive heating layer onto the first dielectric layer, and applying a second dielectric layer onto the resistive heating layer. The heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of at least one of the first dielectric layer and a coefficient of thermal expansion of the resistive heating layer. |
申请公布号 |
US9224626(B2) |
申请公布日期 |
2015.12.29 |
申请号 |
US201213541006 |
申请日期 |
2012.07.03 |
申请人 |
Watlow Electric Manufacturing Company |
发明人 |
Lindley Jacob R.;Meyer Dean J.;Glew Alexander D. |
分类号 |
H05B3/00;H01L21/67;H05B3/14;H05B3/28 |
主分类号 |
H05B3/00 |
代理机构 |
Brinks Gilson & Lione |
代理人 |
Brinks Gilson & Lione |
主权项 |
1. A method of forming a heater assembly for use in semiconductor processing comprising the following steps in sequence:
thermally securing a heater substrate to an application substrate using a joining process selected from the group consisting of brazing, welding, soldering, diffusion bonding, epoxying, and vulcanizing; applying a layered heater to the heater substrate after the heater substrate is secured to the application substrate, the application of the layered heater comprising:
applying a first dielectric layer onto the heater substrate;applying a resistive heating layer onto the first dielectric layer; andapplying a second dielectric layer onto the resistive heating layer, wherein the heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of at least one of the first dielectric layer and a coefficient of thermal expansion of the resistive heating layer. |
地址 |
St. Louis MO US |