Electro-static discharge protective circuit and display substrate and display device having the same

摘要

The present invention relates to display technology. It discloses an electro-static discharge protective circuit comprising: a first thin film transistor having a first source electrode connected to a first reference level end, and a first gate electrode and a first drain electrode connected with each other at a first node; a second thin film transistor having a second source electrode connected to said first node, and a second gate electrode and a second drain electrode connected with each other at a discharge end; a third thin film transistor having a third source electrode connected to said discharge end, and a third gate electrode and a third drain electrode connected with each other at a second node, wherein said second node is connected with said first node; and a fourth thin film transistor having a fourth source electrode connected at said second node, and a fourth gate electrode and a fourth drain electrode connected to a second reference level end. The electro-static discharge protective circuit according to the present invention can reduce a risk of circuit breakdown and failure. Correspondingly, the present invention also discloses a display substrate and a display device having the abovementioned electro-static discharge protective circuit.

主权项

1. An electro-static discharge protective circuit, comprising:
a first thin film transistor having a first source electrode connected to a first reference level end, and a first gate electrode and a first drain electrode connected with each other at a first node; a second thin film transistor having a second source electrode connected to said first node, and a second gate electrode and a second drain electrode connected with each other at a discharge end; a third thin film transistor having a third source electrode connected to said discharge end, and a third gate electrode and a third drain electrode connected with each other at a second node, wherein said second node is connected with said first node; and a fourth thin film transistor having a fourth source electrode connected to said second node, and a fourth gate electrode and a fourth drain electrode connected to a second reference level end.