Semiconductor laser device

摘要

The present invention is aimed to prevent occurrence of COD and rapid degradation of light output in semiconductor laser devices. The semiconductor laser device includes a semiconductor laser element 100A and a support member 200. The semiconductor laser element 100a includes a first electrode 13, a substrate 11, and a semiconductor structure 12 having an emitting facet and a reflecting facet, a second electrode 15, and a pad 16, in this order. The semiconductor laser element 100A is connected to a support member 200 at its pad 16 side via a connecting member 300. The emitting-side end portion of the second electrode 15 is spaced apart from the emitting facet of the semiconductor structure 12, and the emitting-side end portion of the pad 16 is located at an outer side than the emitting-side end portion the second electrode 15.

主权项

1. A semiconductor laser device comprising:
a semiconductor laser element comprising a first electrode, a substrate, a semiconductor structure having an emitting facet and a reflecting facet, a second electrode, and a pad disposed on the second electrode, in this order; the second electrode being in contact with a stripe-shaped region on a surface of the semiconductor structure so as to form an optical waveguide from the reflecting facet to the emitting facet in the semiconductor structure; and a support member connected to the pad via a connecting member; wherein an emitting-side end portion of the second electrode is spaced apart from the emitting facet of the semiconductor structure, the pad extends beyond the emitting-side end portion of the second electrode toward an emitting facet side of the semiconductor structure, and the pad is in contact with the second electrode above the stripe-shaped region, and wherein, in the stripe-shaped region, a width of a contact area between the second electrode and the semiconductor structure at the emitting-side end portion of the second electrode is narrower than a width of a contact area between the second electrode and the semiconductor structure at a center portion of the second electrode.