Vertical structure LEDs

摘要

A vertical structure light-emitting device includes a conductive support, a light-emitting semiconductor structure disposed on the conductive support structure, the semiconductor structure having a first semiconductor surface, a side semiconductor surface and a second semiconductor surface, a first electrode electrically connected to the first-type semiconductor layer, a second electrode electrically connected to the second-type semiconductor layer, wherein the second electrode has a first electrode surface, a side electrode surface and a second electrode surface, wherein the first electrode surface, relative to the second electrode surface, is proximate to the semiconductor structure; and wherein the second electrode surface is opposite to the first electrode surface, and a passivation layer disposed on the side semiconductor surface and the second semiconductor surface.

主权项

1. A light-emitting device, comprising:
a metal support structure; a GaN-based semiconductor structure on the metal support structure, the GaN-based semiconductor structure including a p-type GaN semiconductor layer, a GaN active layer, and an n-type GaN semiconductor layer, wherein the GaN-based semiconductor structure includes a first surface, and a side surface, and a second surface, wherein the first surface, relative to the second surface, is proximate to the metal support structure, wherein the second surface is opposite to the first surface, and wherein a thickness of the metal support structure is 10 times thicker than the GaN-based semiconductor structure;
a p-type electrode on the metal support structure;an n-type electrode on the second surface of the GaN-based semiconductor structure; anda passivation layer on the first surface, the side surface, and the second surface of the GaN-based semiconductor structure.