Arrays of silicon structures including metal silicide regions, and related semiconductor device structures

摘要

A method of forming a metal silicide region. The method comprises forming a metal material over and in contact with exposed surfaces of a dielectric material and silicon structures protruding from the dielectric material. A capping material is formed over and in contact with the metal material. The silicon structures are exposed to heat to effectuate a multidirectional diffusion of the metal material into the silicon structures to form a first metal silicide material. The capping material and unreacted portions of the metal material are removed. The silicon structures are exposed to heat to substantially convert the first metal silicide material into a second metal silicide material. A method of semiconductor device fabrication, an array of silicon structures, and a semiconductor device structure are also described.

主权项

1. An array of silicon structures, comprising:
a silicon base; silicon pillars longitudinally extending from the silicon base and each exhibiting a metal silicide region at a longitudinal extremity thereof, the metal silicide region of each of the silicon pillars confined within a lateral cross-sectional area less than or equal to about 3600 nm2 defined by sidewalls of each of the silicon pillars; and other silicon pillars each having another metal silicide region confined within a lateral cross-sectional area of less than or equal to about 9000 nm2 defined by sidewalls of each of the other silicon pillars, a group of four of the silicon pillars separated from another group of four of the silicon pillars by one of the other silicon pillars.