| 发明名称 | Semiconductor device with conductive pillar unit between shield and silicon substrate | ||
| 摘要 | A semiconductor device includes a silicon substrate, a shield which is disposed on the silicon substrate and includes a conductive material, a capacitor electrode disposed on the shield, and at least one pillar member which is provided between the shield and the silicon substrate and includes a conductive material. The pillar member may be disposed at a location other than a location of a through-hole. | ||
| 申请公布号 | US9224795(B2) | 申请公布日期 | 2015.12.29 |
| 申请号 | US201314014069 | 申请日期 | 2013.08.29 |
| 申请人 | KABUSHIKI KAISHA TOSHIBA | 发明人 | Kawai Shusuke;Mitomo Toshiya;Saigusa Shigehito;Itakura Tetsuro |
| 分类号 | H01L49/02;H01L23/522;H01L23/64;H01L23/66 | 主分类号 | H01L49/02 |
| 代理机构 | Holtz, Holtz, Goodman & Chick PC | 代理人 | Holtz, Holtz, Goodman & Chick PC |
| 主权项 | 1. A semiconductor device, comprising: a silicon substrate; a shield which is disposed on the silicon substrate and comprises a conductive material; capacitor electrodes disposed on and apart from the shield; and at least one pillar member which is provided between the shield and the silicon substrate and comprises a conductive material, the at least one pillar member electrically connecting the shield and the silicon substrate. | ||
| 地址 | Tokyo JP | ||