Method for fabricating nonvolatile memory device

摘要

A method for fabricating a nonvolatile memory device is provided. The method includes forming a transistor including an impurity region formed in a substrate, forming a first interlayer insulation layer covering the transistor, the first interlayer insulation layer including a protrusion overlapping the impurity region, and forming an information storage unit on the protrusion, the information storage unit exposing side surfaces of the protrusion using point cusp magnetron-physical vapor deposition (PCM-PVD) and electrically connected to the impurity region.

主权项

1. A method of fabricating a nonvolatile memory device, comprising:
forming a transistor on a substrate, the transistor including an impurity region formed in the substrate; forming a lower contact electrically connected to the impurity region; forming a first interlayer insulation layer on the lower contact; forming a first trench and a second trench in the first interlayer insulation layer, the first trench extending in a first direction and the second trench extending in a second direction different from the first direction; and forming an information storage unit electrically connected to the lower contact on a top surface of the first interlayer insulation layer using point cusp magnetron-physical vapor deposition (PCM-PVD); and forming a dummy information storage unit on bottom surfaces of the first and second trenches; wherein the information storage unit is not connected to the dummy information storage unit.