| 摘要 |
A light emitting device according to an embodiment includes a first conductivity type semiconductor layer; a second conductivity type semiconductor layer arranged on the first conductivity type semiconductor layer; an active layer which includes quantum well layers and quantum barrier layers between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a buffer layer arranged under the first conductivity type semiconductor layer; and a non-semiconductor layer which is arranged under the buffer layer and has a different reflective index. The non-semiconductor layer is arranged on the entire lower surface of the buffer layer. |
