| 摘要 |
An additive polymer comprising recurring units derived from a fluorosulfonamide-substituted styrene and recurring units derived from a stilbene, styrylnaphthalene, dinaphthylethylene, acenaphthylene, indene, benzofuran, or benzothiophene derivative is added to a polymer capable of increasing alkali solubility under the action of acid to formulate a resist composition. The resist composition can minimize outgassing from a resist film during the EUV lithography and form a resist film having a hydrophilic surface sufficient to prevent formation of blob defects on the film after development. |
