| 发明名称 |
CAPACITIVELY COUPLED ELECTRODELESS PLASMA APPARATUS AND A METHOD USING CAPACITIVELY COUPLED ELECTRODELESS PLASMA FOR PROCESSING A SILICON SUBSTRATE |
| 摘要 |
There is provided a capacitive coupled electodeless plasma apparatus for processing a silicon substrate. The apparatus includes at least one inductive antenna driven by time-varying power sources for providing at least one electrostatic field; and a chamber for locating the silicon substrate. There is also provided a method for processing a silicon substrate using capacitively coupled electrodeless plasma. |
| 申请公布号 |
US2015372167(A1) |
申请公布日期 |
2015.12.24 |
| 申请号 |
US201414764174 |
申请日期 |
2014.02.28 |
| 申请人 |
NANYANG TECHNOLOGICAL UNIVERSITY |
发明人 |
XU Shuyan;CHAN Chia Sern;XU Luxiang |
| 分类号 |
H01L31/0236;H01J37/32;H01L21/67;C23C16/505;H01L31/18;H01L31/20 |
主分类号 |
H01L31/0236 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A capacitive coupled electodeless plasma apparatus for processing a silicon substrate, the apparatus including:
at least one inductive antenna driven by time-varying power sources for providing at least one electrostatic field, the at least one inductive antenna being configured to enable control of ion motion; and a chamber for locating the silicon substrate, wherein the at least one electrostatic field induced by a potential drop across the at least one inductive antenna is for breakdown of feedstock gases and sustenance of discharge in the chamber. |
| 地址 |
Singapore SG |
