发明名称 THIN FILM RDL FOR NANOCHIP PACKAGE
摘要 A high density film adapted for nanochip package comprises three redistribution layers. A bottom redistribution circuit has a plurality of first bottom pads adapted for a nanochip to mount; and has a plurality of first top pads. The density of the first bottom pads is higher than the density of the first top pads. A middle redistribution circuit has a plurality of second bottom pads electrically coupled to the first top pads; and has a plurality of second top pads. The density of the second bottom pads is higher than the density of the second top pads. A top redistribution circuit has a plurality of third bottom pads electrically coupled to the second top pads; and has a plurality of third top pads. The density of the third bottom pads is higher than the density of the third top pads.
申请公布号 US2015371932(A1) 申请公布日期 2015.12.24
申请号 US201514700624 申请日期 2015.04.30
申请人 HU Dyi-Chung 发明人 HU Dyi-Chung
分类号 H01L23/495;H01L21/48 主分类号 H01L23/495
代理机构 代理人
主权项 1. A thin film RDL for nanochip package, comprising: a bottom redistribution circuit, having a plurality of first bottom pads adapted for at least one nanochip to mount; and having a plurality of first top pads; wherein a density of the first bottom pads is higher than a density of the first top pads; a middle redistribution circuit formed on top of the bottom redistribution circuit, having a plurality of second bottom pads electrically coupled to the first top pads, and having a plurality of second top pads; wherein a density of the second bottom pads is higher than a density of the second top pads; and a top redistribution circuit formed on top of the middle redistribution circuit, having a plurality of third bottom pads electrically coupled to the second top pads, and having a plurality of third top pads; wherein a density of the third bottom pads is higher than a density of the third top pads.
地址 Hsinchu TW