SEMICONDUCTOR DEVICES HAVING FINS, AND METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING FINS

摘要

Methods and structures associated with forming finFETs that have fin pitches less than 30 nm are described. A selective nitridation process may be used during spacer formation on the gate to enable finer fin pitch than could be achieved using traditional spacer deposition processes. The spacer formation may also allow precise control over formation of source and drain junctions.

主权项

1. A semiconductor processing method comprising:
forming a fin on a substrate; forming a first layer covering the fin; forming a gate structure at least partially surrounding at least a portion of the fin and the first layer; and depositing a second layer on one or more side surfaces of the gate structure without depositing the second layer on the first layer at one or more side surfaces of the fin.