MEMORY DEVICE AND METHODS OF READING THE MEMORY DEVICE

摘要

Disclosed is a method for reading a memory device including a memory cell for storing data higher than 2 bits. The method includes: a step for determining whether the resistance level of the memory cell is below a critical resistance level; a step for reading out the data based on a first factor which is in inverse proportion to the resistance level, if the resistance level is below the critical resistance level; and a step for reading out the data based on a second factor which is proportional to the resistance level, if the resistance level is above the critical resistance level.