发明名称 TWO-DIMENSIONAL PHOTONIC CRYSTAL LASER AND METHOD OF PRODUCING THE SAME
摘要 A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer 15 having a base body made of AlαGa1-αAs (0<α<1) or (AlβGa1-β)γIn1-γP (0<=β<1, 0<γ<1) with modified refractive index areas (air holes) 151 periodically arranged therein and an epitaxial growth layer 16 created on the two-dimensional photonic crystal layer 15 by an epitaxial method. Since AlαGa1-αAs and (AlβGa1-β)γIn1-γP are solid even at high temperatures, the air holes 151 will not be deformed in the process of creating the epitaxial growth layer 16, so that the performance of the two-dimensional photonic crystal layer 15 as a resonator can be maintained at high levels.
申请公布号 US2015372452(A1) 申请公布日期 2015.12.24
申请号 US201514807504 申请日期 2015.07.23
申请人 KYOTO UNIVERSITY ;ROHM CO., LTD. 发明人 NODA Susumu;SAKAGUCHI Takui;NAGASE Kazuya;KUNISHI Wataru;MIYAI Eiji;MIURA Yoshikatsu;OHNISHI Dai
分类号 H01S5/10;H01S5/187;H01S5/12;H01S5/30 主分类号 H01S5/10
代理机构 代理人
主权项 1. A method of producing a two-dimensional photonic crystal laser, comprising: a) a base-body layer creation process for creating a base-body layer having a same crystal structure as AlxGa1-xAs (0.4<=x<1); b) an air-hole formation process for periodically forming air holes in the base-body layer, each of the air holes having a maximum width d in planer shape and a depth h, where d satisfies d<=200 nm and a depth-to-width ratio h/d satisfies 1.3<=h/d<=5; and c) an epitaxial-layer creation process for creating a layer made of the aforementioned AlxGa1-xAs on the base-body layer and the air holes by an epitaxial method.
地址 Kyoto-shi JP