| 发明名称 |
POST-CMOS PROCESSING AND 3D INTEGRATION BASED ON DRY-FILM LITHOGRAPHY |
| 摘要 |
A method for performing a post processing pattern on a diced chip having a foot-print, comprises the steps of providing a support wafer; applying a first dry film photoresist to the support wafer; positioning a mask corresponding to the footprint of the diced chip on the first dry film photoresist; expose the mask and the first dry film photoresist to UV radiation; remove the mask; photoresist develop the exposed first dry film photoresist to obtain a cavity corresponding to the diced chip; positioning the diced chip inside the cavity; applying a second dry film photoresist to the first film photoresist and the diced chip; and expose and develop the second dry film photoresist applied to the diced chip in accordance with the post processing pattern. |
| 申请公布号 |
US2015371978(A1) |
申请公布日期 |
2015.12.24 |
| 申请号 |
US201314418842 |
申请日期 |
2013.07.19 |
| 申请人 |
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL) |
发明人 |
GUIDUCCI Carlotta;LEBLEBICI Yusuf;TEMIZ Yüksel |
| 分类号 |
H01L25/00;G03F7/32;G03F7/20;H01L21/768;H01L23/00 |
主分类号 |
H01L25/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for performing a post processing pattern on a diced chip having a footprint, comprising the steps of:
providing a support wafer; applying a first dry film photoresist to the support wafer; positioning a mask corresponding to the footprint of the diced chip on the first dry film photoresist; expose the mask and the first dry film photoresist to UV radiation; remove the mask; photoresist develop the exposed first dry film photoresist to obtain a cavity corresponding to the diced chip; positioning the diced chip inside the cavity; applying a second dry film photoresist to the first film photoresist and the diced chip; and expose and develop the second dry film photoresist applied to the diced chip in accordance with the post processing pattern. |
| 地址 |
Lausanne CH |
