| 发明名称 |
RAISED FIN STRUCTURES AND METHODS OF FABRICATION |
| 摘要 |
A method of fabricating raised fin structures is provided, the fabricating including: providing a substrate and at least one dielectric layer over the substrate; forming a trench in the at least one dielectric layer, the trench having a lower portion, a lateral portion, and an upper portion, the upper portion being at least partially laterally offset from the lower portion and being joined to the lower portion by the lateral portion; and, growing a material in the trench to form the raised fin structure, wherein the trench is formed to ensure that any growth defect in the lower portion of the trench terminates either in the lower portion or the lateral portion of the trench and does not extend into the upper portion of the trench. |
| 申请公布号 |
US2015372084(A1) |
申请公布日期 |
2015.12.24 |
| 申请号 |
US201414309956 |
申请日期 |
2014.06.20 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
QI Yi;ZHANG Xunyuan;LABELLE Catherine B. |
| 分类号 |
H01L29/06;H01L21/02;H01L21/311 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
fabricating a raised fin structure, the fabricating comprising:
providing a substrate with at least one dielectric layer above the substrate;forming a trench in the at least one dielectric layer, the trench comprising a lower portion, a lateral portion, and an upper portion, the upper portion being at least partially laterally offset from the lower portion and being joined to the lower portion by the lateral portion; and,growing a material in the trench to form the raised fin structure therein, wherein the trench is formed to ensure that any growth defect in the lower portion of the trench terminates either in the lower portion or the lateral portion of the trench and does not extend into the upper portion of the trench. |
| 地址 |
Grand Cayman KY |
