GRAPHENE-METAL BONDING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE HAVING GRAPHENE-METAL BONDING STRUCTURE

摘要

Disclosed are a graphene-metal bonding structure, a method of manufacturing the same, and a semiconductor device having graphene-metal bonding structure. The graphene-metal bonding structure includes a graphene layer, a metal layer prepared on the graphene layer, and an intermediate layer which is prepared between the graphene layer and the metal layer. The boundary part of the material of the intermediate layer touches the metal layer to form edge-contact.