发明名称 DEVICE AND METHOD FOR NANO-IMPRINT LITHOGRAPHY
摘要 A device for nano-imprint lithography to perform a lithography process to a substrate coated with an electron-sensitive resist. The device comprises a conductive imprint template and an electron source. The imprint template comprises a base portion and a pattern portion on the upper surface of the base portion. The surface of the pattern portion is disposed opposed to the surface of the resist. The pattern portion has a concave-convex pattern corresponding to a target pattern of the resist. The electron source provides electrons to the concave-convex pattern. When the concave-convex pattern contacts the resist, the electrons transfer from the concave-convex pattern to the resist to make the resist exposed. The device combines the advantages of the nano-imprint technology and the electron beam lithography, it has high process compatibility and improved alignment and overlay accuracy and is also conductive to defect control, which can obtain higher productivity and resolution.
申请公布号 US2015370161(A1) 申请公布日期 2015.12.24
申请号 US201414764141 申请日期 2014.08.11
申请人 SHANGHAI INTEGRATED CIRCUIT RESEARCH AND DEVELOPMENT DEVELOPMENT CENTER CO., LTD. 发明人 Yuan Wei
分类号 G03F7/00 主分类号 G03F7/00
代理机构 代理人
主权项 1. A nano-imprint lithography device to perform a lithography process to a substrate coated with an electron-sensitive resist comprising: a conductive imprint template including a base portion and a pattern portion on the upper surface of the base portion; wherein the pattern portion is disposed opposed to the resist and has a concave-convex pattern corresponding to a target pattern of the resist; and an electron source providing electrons to the concave-convex pattern of the imprint template; wherein, when the concave-convex pattern of the template contacts the resist, the electrons transfer from the concave-convex pattern to the resist to make the resist exposed.
地址 Shanghai CN