| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state image pickup device having excellent characteristics and a manufacturing method of the same.SOLUTION: The solid state image pickup device includes: a semiconductor layer 10 at which photo-electric conversion is performed by an n-type diffusion layer and a p-type region 10p; an interlayer 20, provided on the semiconductor layer 10, which is a film having negative fixed charges; an anti-reflection coating 30 provided on the interlayer 20; and a conductive film 40, provided on the anti-reflection coating 30, which is a film containing a metal, a metal oxide, or a metal nitride. |
