发明名称 ダマシンプロセス用絶縁パターン形成材料
摘要 <p>PROBLEM TO BE SOLVED: To provide an insulating pattern forming method capable of easily forming a multilayer structure without performing a complicated etching process or the like, and to provide a resin composition.SOLUTION: There is provided the insulating pattern forming method comprising the steps of: [I] forming an organic pattern on a substrate; [II] embedding an insulating material in the spaces in the organic pattern; [III] removing the organic pattern to obtain a reverse pattern formed of the insulating material; [IV] and curing the obtained reverse pattern. There is also provided an insulating pattern forming material for a damascene process.</p>
申请公布号 JP5835425(B2) 申请公布日期 2015.12.24
申请号 JP20140142245 申请日期 2014.07.10
申请人 JSR株式会社 发明人 出井 慧;生井 準人;保田 慶友;長谷川 公一
分类号 G03F7/40;H01L21/027;H01L21/3205;H01L21/768 主分类号 G03F7/40
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